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62V16258B

#SRAM #4-Mbit #Hitachi #HM62V16258B #static RAM #low power #3.0V #262144x16 #Hi-CMOS #battery-backed
Technical Summary: Hitachi HM62V16258B 4-Mbit Static RAM

Hitachi HM62V16258B 4-Mbit Static RAM

Overview

The Hitachi HM62V16258B Series is a high-performance 4-Mbit static RAM (SRAM) organized as 262,144 words × 16 bits. Manufactured using advanced Hi-CMOS process technology, this SRAM offers a combination of high density, high speed, and low power consumption, making it an ideal choice for battery-backed applications. The device operates on a single 3.0 V supply, with a wide voltage range of 2.7 V to 3.6 V, ensuring compatibility with modern low-power systems.

Designed for applications requiring fast and reliable memory access, the HM62V16258B features a completely static memory architecture, eliminating the need for clock signals or timing strobes. Its low standby power dissipation (3 µW typical) makes it particularly suitable for portable and battery-operated devices.

Features

Applications

The HM62V16258B is designed for a wide range of applications, particularly those requiring high-speed, low-power memory solutions. Key applications include:

Electrical Characteristics

Absolute Maximum Ratings

Recommended Operating Conditions

DC Characteristics

AC Characteristics

Package Information

The HM62V16258B is available in a standard 44-pin Plastic Thin Small Outline Package (TSOP-II). Key package specifications include:

Pin Configuration

The 44-pin TSOP-II package includes the following key pins:

Conclusion

The Hitachi HM62V16258B is a high-performance, low-power 4-Mbit SRAM designed for applications requiring reliable and fast memory access. Its combination of high density, low standby power, and wide operating voltage range makes it an excellent choice for battery-backed and portable systems. The 44-pin TSOP-II package ensures compact and efficient integration into modern electronic designs.

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