HM62W8511H 4-Mbit High-Speed Static RAM

Overview

The HM62W8511H is a high-performance 4-Mbit static RAM (SRAM) organized as 512k words × 8 bits. Designed using advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and high-speed circuit design techniques, this SRAM delivers fast access times, making it ideal for applications requiring high-speed, high-density memory with wide bit-width configurations. Typical applications include cache and buffer memory in computing systems, networking equipment, and embedded systems.

The device operates on a single 3.3V power supply and is packaged in a 400-mil, 36-pin Small Outline J-lead (SOJ) package, optimized for high-density surface mounting. The HM62W8511H is fully TTL-compatible, ensuring seamless integration with a wide range of digital systems.

Features

• Single Supply Voltage: 3.3V ± 0.3V
• High-Speed Access Time: 12 ns / 15 ns (max)
• Completely Static Memory: No clock or timing strobe required
• Equal Access and Cycle Times: Ensures consistent performance
• TTL Compatibility: All inputs and outputs are directly TTL-compatible
• Low Power Consumption:
  • Operating Current: 150 mA / 130 mA (max)
  • TTL Standby Current: 60 mA / 50 mA (max)
  • CMOS Standby Current: 5 mA (max), 1 mA (max) for L-version
  • Data Retention Current: 0.6 mA (max) for L-version
• Data Retention Voltage: 2V (min) for L-version
• Package: 400-mil, 36-pin SOJ for high-density surface mounting
• Center V_CC and V_SS Pinout: Optimized for power distribution

Applications

The HM62W8511H is designed for high-performance applications where fast access times and high-density memory are critical. Key application areas include:

• Cache Memory: Used in computing systems to store frequently accessed data for rapid retrieval.
• Buffer Memory: Ideal for temporary data storage in networking and communication systems.
• Embedded Systems: Suitable for microcontroller-based systems requiring fast SRAM.
• Industrial Control Systems: Provides reliable memory for real-time processing.
• Telecommunications Equipment: Supports high-speed data handling in routers and switches.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5V to +4.6V
• Input Voltage (V_IN): -0.5V to V_CC + 0.5V
• Output Voltage (V_OUT): -0.5V to V_CC + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -65°C to +150°C

Recommended Operating Conditions

• Supply Voltage (V_CC): 3.3V ± 0.3V
• Input High Voltage (V_IH): 2.0V (min)
• Input Low Voltage (V_IL): 0.8V (max)
• Output High Voltage (V_OH): 2.4V (min) at I_OH = -4.0 mA
• Output Low Voltage (V_OL): 0.4V (max) at I_OL = 8.0 mA

DC Characteristics

• Operating Current (I_CC): 150 mA (max) at 12 ns, 130 mA (max) at 15 ns
• TTL Standby Current (I_SB1): 60 mA (max) at 12 ns, 50 mA (max) at 15 ns
• CMOS Standby Current (I_SB2): 5 mA (max), 1 mA (max) for L-version
• Data Retention Current (I_DR): 0.6 mA (max) for L-version at V_CC = 2V

AC Characteristics

• Access Time (t_AA): 12 ns / 15 ns (max)
• Output Enable to Output Valid (t_OE): 6 ns (max)
• Chip Enable to Output Valid (t_CE): 12 ns / 15 ns (max)
• Write Pulse Width (t_WP): 10 ns (min)
• Data Setup Time (t_DS): 6 ns (min)
• Data Hold Time (t_DH): 0 ns (min)

Package Information

36-Pin SOJ Package Dimensions

• Package Type: 400-mil, 36-pin Small Outline J-lead (SOJ)
• Width: 0.400 inches (nominal)
• Length: 1.000 inches (nominal)
• Height: 0.220 inches (max)
• Lead Pitch: 0.050 inches (1.27 mm)
• Pin Count: 36

Pin Configuration

The HM62W8511H features a center V_CC and V_SS pinout for optimized power distribution. Key pins include:

• Address Inputs (A0-A18): 19 address lines for 512k-word addressing
• Data Input/Output (DQ0-DQ7): 8-bit bidirectional data bus
• Chip Enable (CE): Active-low chip select
• Output Enable (OE): Active-low output enable
• Write Enable (WE): Active-low write control
• Power Supply (V_CC): +3.3V supply
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