HM5425161B DDR SDRAM Technical Summary

Overview

The HM5425161B, HM5425801B, and HM5425401B are Double Data Rate (DDR) Synchronous Dynamic Random-Access Memory (SDRAM) devices designed for high-speed data transfer applications. These devices leverage a 2-bit prefetch pipelined architecture to achieve efficient read and write operations synchronized with the clock edges. The inclusion of Data Strobe (DQS) for both read and write operations ensures reliable high-speed data bus design. The on-chip Delay Locked Loop (DLL) can be enabled or disabled via the extended mode register, providing flexibility in system design.

These DDR SDRAMs are JEDEC standard-compatible and operate with a 2.5V power supply, utilizing SSTL-2 interfaces for all inputs and outputs. They are available in multiple speed grades, including 143 MHz, 133 MHz, 125 MHz, and 100 MHz, catering to a wide range of performance requirements.

Features

• JEDEC Standard Compatibility: Ensures interoperability with industry-standard memory controllers.
• 2.5V Power Supply: Optimized for low-power operation while maintaining high performance.
• SSTL-2 Interface: Provides robust signaling for all inputs and outputs.
• High Clock Frequencies: Supports 143 MHz, 133 MHz, 125 MHz, and 100 MHz operation.
• Data Synchronization: Data inputs, outputs, and DM (Data Mask) are synchronized with DQS for reliable operation.
• Four Independent Banks: Enables simultaneous and independent operation of multiple banks.
• Burst Read/Write Operation: Enhances data throughput with programmable burst lengths of 2, 4, or 8.
• Burst Read Stop Capability: Allows for early termination of burst operations.
• Programmable Burst Sequence: Supports both sequential and interleave modes.
• Start Addressing Capability: Supports even and odd start addresses.
• Programmable CAS Latency: Configurable to 2 or 2.5 clock cycles.
• Refresh Modes: Includes auto-refresh and self-refresh modes with 8192 refresh cycles (7.8 µs per row).

Applications

The HM5425161B series is suitable for a variety of high-performance applications, including:

• Computing Systems: Desktop, laptop, and server memory modules.
• Networking Equipment: Routers, switches, and network interface cards.
• Consumer Electronics: High-definition televisions, gaming consoles, and set-top boxes.
• Embedded Systems: Industrial control systems, medical devices, and automotive electronics.
• Telecommunications: Base stations and communication infrastructure.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5V to +3.6V
• Input Voltage (V_IN): -0.5V to V_CC + 0.5V
• Operating Temperature Range: 0°C to +70°C (commercial), -40°C to +85°C (industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (V_CC): 2.3V to 2.7V
• Input High Voltage (V_IH): V_REF + 0.18V to V_CC + 0.3V
• Input Low Voltage (V_IL): -0.3V to V_REF - 0.18V
• Clock Frequency: 100 MHz to 143 MHz (depending on variant)

Timing Parameters

• CAS Latency (CL): 2 or 2.5 clock cycles
• Row Cycle Time (t_RC): 60 ns (min)
• Row Precharge Time (t_RP): 20 ns (min)
• Refresh Period (t_REF): 64 ms (8192 cycles)

Package Information

Package Type

The HM5425161B series is available in a 400-mil, 66-pin plastic Thin Small Outline Package (TSOP) Type II (TTP-66D). This package is designed for surface-mount applications and provides a compact footprint for high-density memory modules.

Pin Configuration

The pin arrangement varies slightly between the HM5425161B, HM5425801B, and HM5425401B models, but all share common features such as:

• Address Inputs (A0-A14): Used for row, column, and bank selection.
• Data Inputs/Outputs (DQ0-DQ15): Bi-directional data lines for read and write operations.
• Data Strobe (DQS): Synchronizes data transfer for both read and write operations.
• Control Signals (RAS, CAS, WE, CS): Command inputs for memory operations.
• Clock Inputs (CLK, CLK): Differential clock inputs for synchronization.
• Power and Ground Pins (V_CC, V_SS, V_CCQ, V_SSQ): Provide power and grounding for internal circuits and I/O buffers.

Ordering Information

The following table summarizes the ordering options for the HM5425161B series:

• HM5425161BTT-75A: 143 MHz/133 MHz operation
• HM5425161BTT-75B: 133 MHz/100 MHz operation
• HM5425161BTT-10: 125 MHz/100 MHz operation
• HM5425801BTT-75A: 143 MHz/133 MHz operation
• HM5425801BTT-75B: 133 MHz/100 MHz operation
• HM5425801BTT-10: 125 MHz/100 MHz operation
• HM5425401BTT-75A: 143 MHz/133 MHz operation
• HM5425401BTT-75B: 133 MHz/100 MHz operation
• HM5425401BTT-10: 125 MHz/100 MHz operation

Conclusion

The HM5425161B series of DDR SDRAM devices offers a robust solution for high-speed memory applications, combining JEDEC-standard compatibility with advanced features such as programmable burst lengths, CAS latency, and refresh modes. Its flexible design and wide operating range make it suitable for diverse applications