K4E660412C

K4E660412C 16Mx4 EDO Mode DRAM Technical Summary

Overview

The K4E660412C is a 16Mx4 Extended Data Out (EDO) Mode DRAM component manufactured by Samsung Electronics Co., Ltd. This high-performance memory device is designed using advanced CMOS technology to deliver high bandwidth, low power consumption, and enhanced reliability. The component supports various refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (available in L-version only). It is compatible with LVTTL (3.3V) logic levels and is available in industry-standard plastic SOJ and TSOP(II) packages.

Features

• Extended Data Out (EDO) Mode Operation: Enhances data transfer efficiency by allowing data to remain valid after CAS transitions.
• Multiple Refresh Modes: Supports CAS-before-RAS, RAS-only, and Hidden refresh for flexible memory management.
• Self-Refresh Capability (L-version only): Enables low-power operation by internally managing refresh cycles.
• Fast Parallel Test Mode: Facilitates rapid testing during manufacturing and validation.
• LVTTL (3.3V) Compatibility: Ensures seamless integration with modern low-voltage systems.
• Early Write or Output Enable Controlled Write: Provides flexibility in write operation timing.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Wide Power Supply Range: Operates at +3.3V ±0.3V for robust performance.
• Packaging Options: Available in Plastic SOJ and TSOP(II) packages for diverse application requirements.

Applications

The K4E660412C is suitable for a wide range of applications, including but not limited to:

• Computer Systems: Used in desktops, laptops, and servers for high-speed memory operations.
• Networking Equipment: Ideal for routers, switches, and other networking devices requiring reliable memory.
• Embedded Systems: Suitable for industrial control systems, medical devices, and automotive electronics.
• Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices.
• Telecommunications: Used in base stations and communication infrastructure.

Electrical Characteristics

The K4E660412C operates under the following electrical conditions:

• Power Supply Voltage (Vcc): 3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min (relative to Vss)
• Input Low Voltage (VIL): 0.8V max (relative to Vss)
• Output High Voltage (VOH): 2.4V min (at IOH = -4.0mA)
• Output Low Voltage (VOL): 0.4V max (at IOL = 8.0mA)
• Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on the variant.
• Refresh Cycles: 4K refresh cycles required every 64ms.

Functional Block Diagram

The K4E660412C features a well-organized internal structure, as illustrated in the functional block diagram. Key components include:

• Control Clocks (RAS, CAS, W): Manage row and column access, as well as write operations.
• Memory Array: Comprises 16,777,216 x 4 cells, organized for efficient data storage and retrieval.
• Address Inputs (A0~A12): Used for row and column addressing (A0~A11 for 4K refresh).
• Power Pins (Vcc, Vss): Provide the necessary power supply and ground connections.

Package Information

The K4E660412C is available in two industry-standard packages:

• Plastic SOJ (Small Outline J-Lead): A compact and robust package suitable for high-density PCB designs.
• TSOP(II) (Thin Small Outline Package): A low-profile package ideal for space-constrained applications.

Both packages are designed to meet JEDEC standards, ensuring compatibility with automated assembly processes and reflow soldering techniques.

Conclusion

The K4E660412C 16Mx4 EDO Mode DRAM from Samsung Electronics Co., Ltd. is a versatile and high-performance memory solution suitable for a wide range of applications. Its advanced features, including multiple refresh modes, LVTTL compatibility, and flexible packaging options, make it an excellent choice for designers seeking reliable and efficient memory solutions. With its robust electrical characteristics and adherence to industry standards, the K4E660412C is well-suited for demanding environments in computing, networking, and embedded systems.