K4E660812C 8Mx8 EDO Mode DRAM Technical Summary

Overview

The K4E660812C is an 8Mx8 Extended Data Out (EDO) Mode DRAM component manufactured using Samsung's advanced CMOS process technology. This high-performance memory device offers enhanced bandwidth while maintaining low power consumption and high reliability. The component supports various refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only), making it suitable for a wide range of applications requiring efficient memory management.

With its 8,388,608 x 8 cell architecture, the K4E660812C provides 64Mb of memory organized as 8 million words by 8 bits. The device operates with a +3.3V±0.3V power supply and features LVTTL-compatible inputs and outputs for easy integration with modern 3.3V systems.

Key Features

• 8Mx8 organization (64Mb total capacity)
• Extended Data Out (EDO) Mode operation for improved bandwidth
• Multiple refresh capabilities:
  • CAS-before-RAS refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh capability (L-version only)
• Fast parallel test mode capability for efficient production testing
• LVTTL (3.3V) compatible inputs and outputs
• Flexible write modes:
  • Early Write
  • Output enable controlled write
• JEDEC standard pinout for compatibility
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply operation

Applications

The K4E660812C is designed for use in a variety of electronic systems requiring reliable, high-performance memory solutions:

• Desktop and notebook computer systems
• Workstations and servers
• Networking equipment (routers, switches)
• Telecommunications systems
• Embedded systems
• Industrial control systems
• Test and measurement equipment
• Graphics subsystems

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc+0.5V
• Output Voltage (Vout): -0.5V to Vcc+0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min (Vcc=3.0V), 2.2V min (Vcc=3.3V), 2.4V min (Vcc=3.6V)
• Input Low Voltage (VIL): 0.8V max (Vcc=3.0V), 0.9V max (Vcc=3.3V), 1.0V max (Vcc=3.6V)
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Ili): ±1μA max
• Output Leakage Current (Ilo): ±1μA max
• Operating Current (Icc1): TBD mA max (active)
• Standby Current (Icc2): TBD μA max (CMOS level inputs)
• Refresh Current (Icc3): TBD mA max
• Self Refresh Current (Icc4): TBD μA max (L-version only)

AC Characteristics

• RAS Precharge Time (tRP): TBD ns
• CAS Precharge Time (tCP): TBD ns
• RAS to CAS Delay Time (tRCD): TBD ns
• CAS Pulse Width (tCAS): TBD ns
• RAS Pulse Width (tRAS): TBD ns
• Access Time from CAS (tCAC): TBD ns
• Access Time from RAS (tRAC): TBD ns
• Write Pulse Width (tWP): TBD ns
• Data Hold Time (tDH): TBD ns
• Refresh Period (tREF): 64ms (4096 cycles)

Functional Description

The K4E660812C operates as a standard EDO DRAM with enhanced features for improved performance. The Extended Data Out mode allows the data outputs to remain valid after CAS goes high, enabling faster cycle times by overlapping operations. The device supports both page mode and static column mode operations.

The refresh operation can be performed through several methods:

• CAS-before-RAS refresh: Initiated by bringing CAS low before RAS, with the refresh address generated internally
• RAS-only refresh: Initiated by bringing RAS low while CAS remains high
• Hidden refresh: Allows refresh during normal read or write operations
• Self-refresh (L-version): Enables the device to automatically refresh its contents without external control signals

Package Information

Available Packages

• Plastic Small Outline J-lead (SOJ)
• Thin Small Outline Package Type II (TSOP II)

Package Dimensions

SOJ Package:

• Package Body Size: 400mil width x 875mil length
• Lead Pitch: 1.27mm
• Package Height: 3.81mm max
• Lead Count: 32

TSOP II Package:

• Package Body Size: 10.16mm x 18.41mm
• Lead Pitch: 0.5mm
• Package Height: 1.2mm max
• Lead Count: 32

Ordering Information

The K4E660812C is available in different versions and packages. The complete part number is constructed as follows:

• K4E: Samsung DRAM product family
• 6608: 64Mb (8Mx8) organization
• 12: Specific device revision
• C: Commercial temperature range (0°C to +70°C)
• Package type suffix:
  • H: SOJ package
  • L: TSOP II package
• Speed grade suffix: -XX where XX indicates access time in ns

Quality and Reliability

Samsung Electronics maintains rigorous quality standards for the K4E660812C DRAM family:

• 100% production tested
• Burn-in available for high-reliability applications
• ESD protection exceeds 2000V (Human Body Model)
• Latch-up immunity meets JEDEC standards

Samsung Electronics Co., Ltd. reserves the right to change specifications and information herein without notice. Users should verify current specifications with Samsung representatives before finalizing designs.