K4F640812C 8Mx8 Fast Page Mode DRAM

Overview

The K4F640812C is an 8Mx8 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured by Samsung Electronics. This high-performance memory device is designed for applications requiring high bandwidth, low power consumption, and reliable operation. Fabricated using advanced CMOS technology, it supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only). The device is compatible with LVTTL (3.3V) logic levels and is available in industry-standard SOJ and TSOP(II) packages.

Features

• Fast Page Mode Operation: Enables high-speed data access by allowing multiple column accesses within the same row.
• Multiple Refresh Modes: Supports CAS-before-RAS, RAS-only, and Hidden refresh for flexible memory management.
• Self-Refresh Capability (L-version only): Reduces power consumption by enabling the device to refresh itself without external control signals.
• Fast Parallel Test Mode: Facilitates efficient testing during manufacturing and validation.
• LVTTL (3.3V) Compatibility: Ensures seamless integration with modern low-voltage systems.
• Early Write or Output Enable Controlled Write: Provides flexibility in write operation timing.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Package Options: Available in Plastic SOJ and TSOP(II) packages for versatile PCB mounting.
• Power Supply: Operates at +3.3V ±0.3V, making it suitable for low-power applications.

Applications

The K4F640812C is ideal for a wide range of applications, including but not limited to:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Networking Equipment: Suitable for routers, switches, and other high-bandwidth communication devices.
• Consumer Electronics: Integrated into smart TVs, gaming consoles, and set-top boxes.
• Industrial Control Systems: Provides reliable memory for automation and control applications.
• Embedded Systems: Ideal for applications requiring compact, low-power memory solutions.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (VIH): 2.0V to Vcc + 0.3V
• Input Low Voltage (VIL): -0.3V to +0.8V
• Operating Temperature: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)

DC Characteristics

• Input Leakage Current (Iin): ±1µA (max) at Vcc = 3.6V
• Output Leakage Current (Iout): ±1µA (max) at Vcc = 3.6V
• Standby Current (Isb): 10mA (max) at Vcc = 3.6V
• Operating Current (Icc): 120mA (max) at Vcc = 3.6V

AC Characteristics

• RAS Access Time (tRAC): 60ns (max)
• CAS Access Time (tCAC): 15ns (max)
• RAS Precharge Time (tRP): 30ns (min)
• CAS Precharge Time (tCP): 20ns (min)
• Write Cycle Time (tWC): 60ns (min)

Package Information

Plastic SOJ Package

• Package Dimensions: 400mil width, 1.27mm lead pitch
• Pin Count: 42 pins
• Material: Molded plastic, lead-free

TSOP(II) Package

• Package Dimensions: 10.16mm x 18.41mm x 1.2mm
• Pin Count: 54 pins
• Material: Molded plastic, lead-free

Functional Block Diagram

The K4F640812C features a memory array of 8,388,608 x 8 cells, controlled by RAS, CAS, and W signals. The address inputs (A0~A12) are used to select the desired memory location. The device includes a 4K refresh cycle capability, ensuring data integrity over extended periods.

Conclusion

The K4F640812C 8Mx8 Fast Page Mode DRAM is a versatile and reliable memory solution for a wide range of applications. Its advanced features, including multiple refresh modes and low-power operation, make it an excellent choice for modern electronic systems. With industry-standard packaging and JEDEC-compliant pinout, it offers ease of integration and robust performance in demanding environments.