K4F641612D

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K4F641612D - 4Mx16 Fast Page Mode DRAM

Overview

The K4F641612D is a high-performance 4Mx16 Fast Page Mode Dynamic Random-Access Memory (DRAM) component from Samsung Electronics. Fabricated using advanced CMOS technology, this DRAM family offers high bandwidth, low power consumption, and high reliability. It supports multiple refresh modes, including CAS-before-RAS refresh, RAS-only refresh, Hidden refresh, and Self-refresh (available in L-version). The device is designed for applications requiring efficient memory access and low-voltage operation, making it suitable for embedded systems, networking equipment, and other high-performance computing applications.

Key Features

• Fast Page Mode Operation: Enables faster access to memory locations within the same row.
• 2CAS Byte/Word Read/Write Operation: Supports flexible data access in byte or word configurations.
• Multiple Refresh Modes:
  • CAS-before-RAS (CBR) refresh capability
  • RAS-only refresh capability
  • Hidden refresh capability
  • Self-refresh capability (L-version only)
• Fast Parallel Test Mode: Facilitates efficient testing during manufacturing and validation.
• LVTTL (3.3V) Compatibility: Inputs and outputs are compatible with low-voltage TTL standards.
• Flexible Write Control: Supports Early Write or Output Enable controlled write operations.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Packaging Options: Available in Plastic TSOP(II) packages for compact and efficient PCB integration.
• Power Supply: Operates at +3.3V ±0.3V, making it suitable for low-power applications.

Applications

The K4F641612D is designed for a wide range of applications, including but not limited to:

• Embedded Systems: Used in microcontrollers and system-on-chip (SoC) designs requiring reliable DRAM.
• Networking Equipment: Suitable for routers, switches, and other high-speed data processing devices.
• Consumer Electronics: Integrated into smart TVs, set-top boxes, and gaming consoles.
• Industrial Automation: Provides stable memory for control systems and data logging.
• Telecommunications: Supports buffering and temporary storage in communication devices.

Electrical Characteristics

The following table summarizes the key electrical specifications of the K4F641612D:

• Operating Voltage: 3.3V ±0.3V
• Input/Output Logic Levels: LVTTL-compatible
• Refresh Modes:
  • CAS-before-RAS (CBR) refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh (L-version only)
• Access Time: Varies based on operating conditions (refer to datasheet for detailed timing diagrams).
• Power Consumption: Optimized for low-power operation; exact values depend on usage mode (active, standby, self-refresh).

Package Information

The K4F641612D is available in a Plastic TSOP(II) package, which provides a compact footprint for space-constrained designs. Key package details include:

• Package Type: Thin Small Outline Package (TSOP-II)
• Pin Count: 54 pins (standard configuration)
• Dimensions:
  • Width: 10.16mm (typical)
  • Length: 22.22mm (typical)
  • Height: 1.20mm (maximum)
• Pin Pitch: 0.8mm (standard for TSOP packages)
• Mounting Style: Surface-mount technology (SMT) compatible

Functional Description

The K4F641612D operates in Fast Page Mode, allowing for rapid sequential access to memory locations within the same row. The device supports multiple refresh modes to maintain data integrity, including:

• CAS-before-RAS (CBR) Refresh: Reduces external refresh control overhead.
• RAS-only Refresh: Simplifies refresh cycles by using only the RAS signal.
• Hidden Refresh: Allows refresh operations without disrupting ongoing memory access.
• Self-Refresh (L-version): Enables autonomous refresh in low-power or standby modes.

The device also supports 2CAS Byte/Word Read/Write operations, providing flexibility in data handling. The LVTTL-compatible interface ensures seamless integration with modern 3.3V systems.

Conclusion

The K4F641612D is a versatile and high-performance DRAM solution suitable for a wide range of applications. Its advanced features, including multiple refresh modes, low-power operation, and industry-standard packaging, make it an excellent choice for designers seeking reliable and efficient memory solutions. For detailed timing diagrams, absolute maximum ratings, and further specifications, consult the official Samsung Electronics datasheet.

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