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2N5884

#2N5884 #PNP #power transistor #high-power amplification #switching applications #epitaxial-base technology #thermal stability #push-pull configurations
2N5884 Technical Summary

2N5884 - Silicon PNP Power Transistor

Overview

The 2N5884 is a silicon PNP power transistor designed for high-power amplification and switching applications. It is part of a complementary pair with the 2N5886 (NPN counterpart), offering symmetrical performance characteristics for push-pull configurations. This transistor is characterized by its high current handling capability, robust construction, and reliable performance in demanding environments.

Manufactured using epitaxial-base technology, the 2N5884 provides excellent thermal stability and high gain at elevated currents. The device is particularly suitable for applications requiring substantial power dissipation and current amplification in the 10-30A range.

Features

Applications

The 2N5884 finds use in a wide variety of power electronics applications, including:

Electrical Characteristics

(All characteristics measured at Tj = 25°C unless otherwise specified)

Absolute Maximum Ratings

Thermal Characteristics

DC Current Gain

Saturation Characteristics

Package Information

The 2N5884 is available in a robust TO-3 metal can package, offering excellent thermal performance and mechanical durability. The package features:

Package Dimensions (mm)

Performance Characteristics

Safe Operating Area

The 2N5884 features an excellent safe operating area (SOA) due to its robust construction and thermal characteristics. The SOA is limited by:

Frequency Response

While primarily designed for power applications, the 2N5884 offers reasonable frequency response:

Mounting Considerations

Proper mounting is crucial for achieving maximum performance from the 2N5884:

Reliability Data

The 2N5884 demonstrates excellent reliability when operated within specified limits:

Ordering Information

The device is available in several packaging options:

Standard marking includes:

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