Technical Summary: 52 10 N-Channel Enhancement Mode MOSFET

Overview

The 52 10 is an N-channel enhancement mode MOSFET designed for high-efficiency switching and amplification applications. This component is optimized for low on-state resistance (R_DS(on)) and fast switching speeds, making it suitable for power management, motor control, and other high-performance electronic systems. Its robust construction ensures reliability under demanding operational conditions.

Features

• N-Channel Enhancement Mode: Provides efficient switching with positive gate-to-source voltage.
• Low On-State Resistance (R_DS(on)): Minimizes power loss and improves thermal performance.
• High Current Handling: Capable of sustaining high drain currents for power applications.
• Fast Switching Speed: Enables high-frequency operation in switching circuits.
• Low Gate Drive Requirements: Reduces the complexity of drive circuitry.
• Enhanced Thermal Performance: Designed to dissipate heat efficiently, ensuring stable operation.

Applications

The 52 10 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Supplies: Switching regulators, DC-DC converters, and inverters.
• Motor Control: H-bridge circuits, PWM motor drivers.
• Automotive Systems: Electronic control units (ECUs), LED drivers.
• Consumer Electronics: Battery management systems, load switches.
• Industrial Equipment: Relay replacements, solenoid drivers.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 52 10 MOSFET under standard test conditions (unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 52A
• Pulsed Drain Current (I_DM): 100A
• Power Dissipation (P_D): 150W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (V_DS = V_GS, I_D = 250µA)
• On-State Resistance (R_DS(on)): 10mΩ (V_GS = 10V, I_D = 25A)
• Gate-Source Leakage Current (I_GSS): ±100nA (V_GS = ±20V)
• Drain-Source Leakage Current (I_DSS): 1µA (V_DS = 100V, V_GS = 0V)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 2000pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Output Capacitance (C_oss): 500pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Reverse Transfer Capacitance (C_rss): 100pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Turn-On Delay Time (t_d(on)): 10ns (V_DD = 50V, I_D = 25A, V_GS = 10V)
• Turn-Off Delay Time (t_d(off)): 20ns (V_DD = 50V, I_D = 25A, V_GS = 10V)

Package Information

The 52 10 MOSFET is available in a TO-220 package, which provides excellent thermal and electrical performance. The package dimensions and pin configuration are as follows:

TO-220 Package Dimensions

• Package Type: TO-220 (Through-Hole)
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm
• Mounting Hole Diameter: 3.2mm (recommended)

Pin Configuration

• Pin 1 (Gate - G): Controls the conductivity between drain and source.
• Pin 2 (Drain - D): Connects to the load or power supply.
• Pin 3 (Source - S): Connects to ground or common reference.

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heatsink)

Conclusion

The 52 10 N-channel enhancement mode MOSFET is a high-performance component suitable for a variety of power switching and amplification applications. Its low on-state resistance, high current capability, and robust thermal performance make it an excellent choice for demanding environments. The TO-220 package ensures ease of integration into both prototyping and production designs. Engineers and designers can rely on this MOSFET for efficient and reliable operation in their circuits.