64 60 - N-Channel Enhancement Mode MOSFET

Overview

The 64 60 is a high-performance N-channel enhancement mode MOSFET designed for power switching applications. This component offers excellent efficiency, fast switching speeds, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications. The device is characterized by its low on-resistance (R_DS(on)) and high current handling capability, ensuring minimal power loss and optimal performance in demanding circuits.

Features

• N-Channel Enhancement Mode: Designed for high-efficiency switching applications.
• Low On-Resistance (R_DS(on)): Minimizes conduction losses and improves overall efficiency.
• High Current Handling: Capable of supporting significant load currents.
• Fast Switching Speed: Enables high-frequency operation, reducing switching losses.
• Robust Thermal Performance: Designed to dissipate heat effectively, ensuring reliability under high-power conditions.
• Low Gate Drive Requirements: Compatible with low-voltage control signals, simplifying circuit design.
• ESD Protection: Enhanced electrostatic discharge protection for improved durability.

Applications

The 64 60 MOSFET is versatile and finds use in a variety of applications, including but not limited to:

• Power Supplies: Used in DC-DC converters, voltage regulators, and switch-mode power supplies (SMPS).
• Motor Control: Ideal for driving motors in industrial automation, robotics, and automotive systems.
• LED Lighting: Efficiently controls current in LED drivers and dimming circuits.
• Battery Management: Protects and manages power in battery-operated devices and charging systems.
• Audio Amplifiers: Provides high-fidelity switching in class-D audio amplifiers.
• Consumer Electronics: Used in laptops, smartphones, and other portable devices for power management.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 64 60 MOSFET under standard operating conditions (unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 64A
• Pulsed Drain Current (I_DM): 100A
• Power Dissipation (P_D): 150W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Drain-Source On-Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V, I_D = 32A
• Gate Threshold Voltage (V_GS(th)): 2V to 4V
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 60V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1000pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 20ns (typ) at V_DD = 30V, I_D = 32A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 50ns (typ) at V_DD = 30V, I_D = 32A, R_G = 10Ω

Package Information

The 64 60 MOSFET is available in a TO-220 package, which provides excellent thermal and electrical performance. The package is designed for easy mounting on heat sinks and printed circuit boards (PCBs). Below are the key package details:

• Package Type: TO-220 (Through-Hole)
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Dimensions: 10.4mm x 4.6mm x 9.15mm (L x W x H)
• Mounting Style: Through-Hole with optional heat sink attachment
• Weight: Approximately 2.0g
• Material: Molded plastic with metal leads for durability

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heat sink)

Conclusion

The 64 60 N-channel enhancement mode MOSFET is a high-performance component designed for power switching applications. With its low on-resistance, high current capability, and robust thermal performance, it is well-suited for a wide range of industrial, automotive, and consumer electronics applications. The TO-220 package ensures easy integration into existing designs while providing efficient heat dissipation. Engineers and designers can rely on the 64 60 for efficient and reliable power management solutions.