Technical Summary: 72 100 N-Channel MOSFET

Overview

The 72 100 is a high-performance N-channel MOSFET designed for applications requiring low on-state resistance and high switching efficiency. This component is optimized for power management in a variety of electronic circuits, offering robust performance in both industrial and consumer applications. With its advanced silicon technology, the 72 100 provides excellent thermal stability and reliability under demanding conditions.

This MOSFET is particularly suited for high-frequency switching applications, thanks to its low gate charge and fast switching characteristics. Its design ensures minimal power loss, making it an ideal choice for energy-efficient systems.

Features

• Low On-State Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• High Switching Speed: Optimized for high-frequency applications.
• Low Gate Charge: Reduces drive requirements and enhances switching performance.
• High Current Handling: Capable of handling significant drain currents.
• Thermal Stability: Excellent thermal performance due to advanced packaging and silicon technology.
• ESD Protection: Built-in protection against electrostatic discharge.
• Wide Operating Temperature Range: Suitable for use in harsh environments.

Applications

The 72 100 N-channel MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Supplies: DC-DC converters, SMPS, and voltage regulators.
• Motor Control: Brushed and brushless motor drivers.
• Lighting Systems: LED drivers and ballast controls.
• Automotive Electronics: Power distribution, ignition systems, and infotainment.
• Industrial Equipment: Robotics, PLCs, and automation systems.
• Consumer Electronics: Laptops, smartphones, and portable devices.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 72 100 N-channel MOSFET under typical operating conditions (T_j = 25°C unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 72A
• Pulsed Drain Current (I_DM): 144A
• Power Dissipation (P_D): 300W
• Operating Junction Temperature Range (T_j): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V
• On-State Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V, I_D = 36A
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 100V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1000pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 10ns (typ) at V_DD = 50V, I_D = 36A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 20ns (typ) at V_DD = 50V, I_D = 36A, R_G = 10Ω

Package Information

The 72 100 N-channel MOSFET is available in a TO-220 package, which provides excellent thermal performance and mechanical robustness. The package is designed for easy mounting on heat sinks, ensuring efficient heat dissipation during high-power operation.

Package Dimensions

• Package Type: TO-220
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 16.5mm (max)
• Lead Pitch: 2.54mm
• Mounting Style: Through-hole
• Weight: 2.0g (approx.)

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 0.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W

Conclusion

The 72 100 N-channel MOSFET is a high-performance component that combines low on-state resistance, high switching speed, and excellent thermal management. Its robust design makes it suitable for a wide range of power management applications, from consumer electronics to industrial systems. With its TO-220 package, the 72 100 ensures reliable operation even under high-power conditions, making it a preferred choice for engineers and designers.