BF513 Technical Summary

Overview

The BF513 is an asymmetrical N-channel planar MOSFET designed for high-performance switching and amplification applications. This component is optimized for low on-resistance and fast switching speeds, making it suitable for a variety of power management and signal processing tasks. The BF513 is built using advanced planar technology, ensuring reliability and efficiency in demanding environments.

With its robust construction and excellent thermal performance, the BF513 is ideal for use in both industrial and consumer electronics. Its asymmetrical design allows for optimized current flow, reducing power losses and improving overall system efficiency.

Features

• Asymmetrical N-Channel Design: Optimized for enhanced current handling and reduced power dissipation.
• Low On-Resistance (R_DS(on)): Minimizes conduction losses, improving efficiency.
• Fast Switching Speed: Enables high-frequency operation, suitable for PWM applications.
• High Voltage Tolerance: Supports a wide range of operating voltages, ensuring versatility.
• Excellent Thermal Performance: Designed to dissipate heat effectively, enhancing reliability.
• Planar Technology: Provides consistent performance and long-term stability.
• RoHS Compliant: Meets environmental and safety standards.

Applications

The BF513 is suitable for a wide range of applications, including but not limited to:

• Power Management: DC-DC converters, voltage regulators, and power supplies.
• Motor Control: H-bridge circuits, motor drivers, and servo controllers.
• Audio Amplification: Class-D amplifiers and audio switching circuits.
• Lighting Systems: LED drivers and dimming circuits.
• Industrial Automation: Relay replacements and solenoid drivers.
• Consumer Electronics: Battery management systems and portable devices.

Electrical Characteristics

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 5A
• Pulsed Drain Current (I_DM): 20A
• Power Dissipation (P_D): 40W
• Operating Junction Temperature (T_J): -55°C to +150°C
• Storage Temperature (T_STG): -55°C to +150°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V
• On-Resistance (R_DS(on)): 0.5Ω (max) at V_GS = 10V, I_D = 2A
• Gate-Source Leakage Current (I_GSS): ±100nA (max)
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 100V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 300pF (typ) at V_DS = 25V
• Output Capacitance (C_oss): 150pF (typ) at V_DS = 25V
• Reverse Transfer Capacitance (C_rss): 50pF (typ) at V_DS = 25V
• Turn-On Delay Time (t_d(on)): 10ns (typ)
• Turn-Off Delay Time (t_d(off)): 20ns (typ)
• Rise Time (t_r): 15ns (typ)
• Fall Time (t_f): 25ns (typ)

Package Information

The BF513 is available in a TO-220 package, which provides excellent thermal and electrical performance. The package is designed for easy mounting on heat sinks, ensuring efficient heat dissipation in high-power applications.

Package Dimensions

• Package Type: TO-220 (Through-Hole)
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm
• Mounting Hole Diameter: 3.2mm (recommended)

Package Marking

The BF513 is marked with the following information on the package:

• Part Number: BF513
• Date Code: YYWW (Year and Week of Manufacture)
• Manufacturer Logo: Included for authenticity.

Conclusion

The BF513 is a high-performance N-channel MOSFET that offers excellent electrical and thermal characteristics, making it suitable for a wide range of applications. Its asymmetrical design, low on-resistance, and fast switching speeds ensure efficient operation in power management, motor control, and audio amplification circuits. The TO-220 package provides robust mechanical and thermal performance, making the BF513 a reliable choice for demanding environments.