BST70 - N-Channel Enhancement Mode MOSFET

Overview

The BST70 is a high-performance N-channel enhancement mode power MOSFET designed for applications requiring very low on-state resistance and efficient switching characteristics. This component is optimized for direct interface with CMOS and TTL logic levels, making it ideal for modern digital control systems. The BST70 combines advanced silicon technology with a robust package design to deliver superior power handling capabilities while maintaining excellent thermal performance.

Engineered for reliability and efficiency, the BST70 features an optimized gate charge to minimize switching losses in high-frequency applications. The device's construction provides excellent avalanche energy capability and superior dv/dt immunity, ensuring stable operation in demanding environments.

Key Features

• Very low R_DS(on): Significantly reduces conduction losses for improved efficiency
• Direct CMOS/TTL interface: Compatible with 3V-15V logic levels without additional drivers
• Fast switching speed: Optimized gate charge for high-frequency operation
• Enhanced thermal performance: Low thermal resistance package design
• Avalanche energy rated: Robust construction for reliable operation in inductive load applications
• Improved dv/dt capability: Superior immunity to voltage transients
• Lead-free and RoHS compliant: Meets environmental regulations

Applications

The BST70 is suitable for a wide range of power switching applications, including:

• Power management systems: DC-DC converters, voltage regulators
• Motor control: Brushed DC motor drivers, stepper motor controllers
• Switching power supplies: SMPS, AC-DC converters
• Automotive electronics: Electronic control units, lighting systems
• Industrial automation: PLC outputs, solenoid drivers
• Consumer electronics: Power distribution, load switching
• Battery protection circuits: Charge/discharge control

Electrical Characteristics

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 5A @ T_C = 25°C
• Pulsed Drain Current (I_DM): 20A
• Power Dissipation (P_D): 40W @ T_C = 25°C
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C

Static Characteristics (T_J = 25°C unless otherwise specified)

• Drain-Source Breakdown Voltage (V_(BR)DSS): 60V (min)
• Gate Threshold Voltage (V_GS(th)): 1.0V to 2.5V (V_DS = V_GS, I_D = 250µA)
• Drain-Source On-Resistance (R_DS(on)):
  • 35mΩ max @ V_GS = 10V, I_D = 5A
  • 45mΩ max @ V_GS = 4.5V, I_D = 5A
• Forward Transconductance (g_fs): 20S (min) @ V_DS = 10V, I_D = 5A
• Gate-Source Leakage Current (I_GSS): ±100nA max @ V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 10µA max @ V_DS = 60V, V_GS = 0V

Dynamic Characteristics

• Input Capacitance (C_iss): 1000pF typical @ V_DS = 25V, V_GS = 0V, f = 1MHz
• Output Capacitance (C_oss): 300pF typical @ same conditions
• Reverse Transfer Capacitance (C_rss): 50pF typical @ same conditions
• Turn-On Delay Time (t_d(on)): 10ns typical @ V_DD = 30V, I_D = 5A, R_G = 10Ω
• Rise Time (t_r): 20ns typical @ same conditions
• Turn-Off Delay Time (t_d(off)): 30ns typical @ same conditions
• Fall Time (t_f): 15ns typical @ same conditions
• Total Gate Charge (Q_g): 25nC typical @ V_DD = 30V, I_D = 5A, V_GS = 10V

Package Information

TO-220AB Package

• Package Type: Through-hole, 3-pin TO-220AB
• Mounting Style: Vertical or horizontal mounting
• Termination: Lead-free, tin-plated
• Thermal Resistance:
  • Junction-to-Case (R_θJC): 1.5°C/W
  • Junction-to-Ambient (R_θJA): 62°C/W (without heatsink)
• Weight: Approximately 2.0 grams
• Package Dimensions:
  • Total Length: 15.9mm max
  • Lead Length: 12.7mm min
  • Lead Width: 0.51mm min
  • Lead Thickness: 0.38mm min
  • Body Width: 10.4mm max
  • Body Height: 4.6mm max
• Marking: "BST70" plus lot