TIP31
Technical Summary: TIP31 NPN Epitaxial Silicon Transistor
Overview
The TIP31 is a series of NPN epitaxial silicon transistors designed for general-purpose amplifier and switching applications. This component is part of a complementary pair with the TIP32 series (PNP transistors). The TIP31 family includes multiple variants (TIP31, TIP31A, TIP31B, TIP31C) with progressively higher voltage ratings, making them suitable for a wide range of industrial and consumer electronics applications. Manufactured by Fairchild Semiconductor, these transistors are known for their robustness and reliability in medium-power circuits.
Features
- NPN epitaxial silicon transistor structure
- Complementary to TIP32/TIP32A/TIP32B/TIP32C PNP transistors
- Multiple voltage rating variants (40V to 100V VCEO)
- High current capability (3A continuous, 5A pulse)
- Medium power dissipation (40W at 25°C case temperature)
- TO-220 package for easy mounting and heat dissipation
- Wide operating temperature range (-65°C to 150°C)
Applications
The TIP31 transistor series finds use in numerous electronic applications including:
- Linear amplifiers
- Power switching circuits
- Motor control systems
- Power supply regulation
- Audio amplifiers
- General purpose switching
- Driver stages in electronic circuits
Absolute Maximum Ratings
TC=25°C unless otherwise noted
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VCBO | Collector-Base Voltage |
|
V |
| VCEO | Collector-Emitter Voltage |
|
V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current (DC) | 3 | A |
| ICP | Collector Current (Pulse) | 5 | A |
| IB | Base Current | 1 | A |
| PC | Collector Dissipation (TC=25°C) | 40 | W |
| PC | Collector Dissipation (Ta=25°C) | 2 | W |
| TJ | Junction Temperature | 150 | °C |
| TSTG | Storage Temperature | -65 to 150 | °C |
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
DC Current Gain (hFE)
The current gain characteristics vary based on collector current and voltage:
- Minimum hFE: 10 (at IC=3A, VCE=4V)
- Maximum hFE: 50 (at IC=0.5A, VCE=4V)
Collector-Emitter Saturation Voltage
- VCE(sat): 1.5V max (IC=3A, IB=0.3A)
- VBE(sat): 2V max (IC=3A, IB=0.3A)
Frequency Characteristics
- Transition frequency (fT): 3MHz typical
- Output capacitance (Cob): 100pF typical
Package Information
TO-220 Package Details
- Package type: TO-220AB
- Mounting style: Through-hole
- Pin configuration:
- Base
- Collector
- Emitter
- Package dimensions:
- Total length: 15.9mm
- Lead length: 12.7mm
- Body width: 10.4mm
- Height: 4.6mm
- Thermal characteristics:
- Thermal resistance, junction to case (RθJC): 3.125°C/W
- Thermal resistance, junction to ambient (RθJA): 62.5°C/W
Handling and Mounting Considerations
When working with the TIP31 transistor series, consider the following:
- Always use appropriate heat sinking for power dissipation above 2W
- Ensure proper lead bending techniques to avoid stress on the package
- Observe proper polarity during circuit insertion
- Use anti-static precautions when handling
- Do not exceed maximum ratings to prevent device failure
Reliability and Quality
The TIP31 series transistors are manufactured with strict quality control measures:
- 100% electrical testing at production
- High temperature burn-in for reliability verification
- Compliant with RoHS environmental standards
- Designed for long-term stability in various operating conditions
