BF961 Technical Summary

Overview

The BF961 is a high-performance N-channel dual-gate MOSFET transistor designed for RF and microwave applications. It features integrated gate protection diodes, excellent cross-modulation performance, and low noise characteristics, making it ideal for use in amplifiers, mixers, and other high-frequency circuits. The device is housed in a TO-50 plastic package, ensuring robust mechanical and thermal performance.

Features

• Integrated gate protection diodes: Enhances reliability by protecting the gate from voltage spikes.
• High cross-modulation performance: Reduces interference in RF applications, ensuring signal clarity.
• Low noise figure: Minimizes signal degradation, making it suitable for sensitive receiver circuits.
• High AGC (Automatic Gain Control) range: Provides excellent dynamic range for variable gain applications.
• Low feedback capacitance: Improves stability and reduces unwanted oscillations.
• Low input capacitance: Enhances high-frequency performance by minimizing capacitive loading.

Applications

The BF961 is widely used in RF and microwave circuits due to its superior performance characteristics. Common applications include:

• RF Amplifiers: Low noise and high gain make it ideal for front-end amplifiers in communication systems.
• Mixers: Excellent cross-modulation performance ensures clean signal mixing.
• AGC Circuits: High AGC range allows for effective gain control in variable signal environments.
• Oscillators: Low feedback capacitance contributes to stable oscillation.
• Receiver Front-Ends: Low noise figure improves sensitivity in radio receivers.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the BF961 transistor under typical operating conditions:

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 20 V
• Drain Current (I_D): 30 mA
• Gate-Source Voltage (V_GS): ±10 V
• Total Power Dissipation (P_tot): 300 mW
• Operating Temperature Range (T_op): -55°C to +150°C

Typical Performance Characteristics

• Noise Figure (NF): 1.5 dB @ 100 MHz
• Forward Transfer Admittance (|Y_fs|): 20 mS @ V_DS = 10 V, I_D = 10 mA
• Input Capacitance (C_iss): 3.5 pF @ V_DS = 10 V, V_GS = 0 V
• Output Capacitance (C_oss): 1.8 pF @ V_DS = 10 V, V_GS = 0 V
• Reverse Transfer Capacitance (C_rss): 0.3 pF @ V_DS = 10 V, V_GS = 0 V

Package Information

The BF961 is housed in a TO-50 plastic package, which provides excellent thermal and mechanical properties. The package is designed for easy mounting and soldering, making it suitable for both prototyping and production environments.

Pin Configuration

• Pin 1: Drain (D)
• Pin 2: Source (S)
• Pin 3: Gate 1 (G1)
• Pin 4: Gate 2 (G2)

Package Dimensions

• Body Diameter: 5.08 mm
• Lead Length: 12.7 mm
• Total Height: 6.35 mm
• Lead Spacing: 2.54 mm (standard)

Marking Information

The BF961 device is marked with the part number "BF961" on the plastic case for easy identification. The TO-50 package is also marked with the manufacturer's logo and other relevant codes.

Conclusion

The BF961 is a versatile and high-performance dual-gate MOSFET transistor, well-suited for RF and microwave applications. Its combination of low noise, high gain, and robust protection features makes it a reliable choice for designers working in communication systems, amplifiers, and other high-frequency circuits. The TO-50 package ensures durability and ease of integration into various circuit designs.