2N1613 NPN Bipolar Junction Transistor (BJT) Technical Summary

Overview

The 2N1613 is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-39 metal can package. This component is designed for medium-power amplification and switching applications, offering reliable performance across a range of operating conditions. With its robust construction and stable electrical characteristics, the 2N1613 is suitable for use in industrial, commercial, and hobbyist electronics.

The transistor features a silicon construction that provides excellent thermal stability and low leakage currents. Its NPN polarity makes it compatible with positive-ground systems and common-emitter amplifier configurations.

Features

• NPN polarity configuration
• TO-39 metal can package for excellent thermal performance
• Medium power handling capability
• High current gain (hFE) with good linearity
• Low collector-emitter saturation voltage
• Silicon construction for thermal stability
• Pb-free and RoHS compliant versions available
• Wide operating temperature range

Applications

The 2N1613 finds use in various electronic circuits including:

• General purpose amplification
• Audio amplifier stages
• Signal processing circuits
• Switching applications
• Driver stages for power transistors
• Oscillator circuits
• Voltage regulators
• Industrial control systems

Electrical Characteristics

(Tamb = 25°C unless otherwise specified)

Absolute Maximum Ratings

• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 600mA
• Total Power Dissipation (PD): 625mW @ 25°C (derate 5mW/°C above 25°C)
• Operating Junction Temperature Range (TJ): -65°C to +200°C
• Storage Temperature Range (TSTG): -65°C to +200°C

DC Current Gain Characteristics

• DC Current Gain (hFE): 40 - 120 @ IC = 10mA, VCE = 1V
• DC Current Gain (hFE): 20 - 70 @ IC = 150mA, VCE = 1V
• Gain Bandwidth Product (fT): 100MHz (typical)

Small Signal Characteristics

• Input Capacitance (Cibo): 15pF @ VCB = 10V, IE = 0
• Output Capacitance (Cobo): 4pF @ VCB = 10V, IE = 0
• Transition Frequency (fT): 100MHz (min) @ IC = 20mA, VCE = 10V

Switching Characteristics

• Delay Time (td): 35ns @ IC = 50mA, VCC = 30V
• Rise Time (tr): 50ns @ IC = 50mA, VCC = 30V
• Storage Time (ts): 300ns @ IC = 50mA, VCC = 30V
• Fall Time (tf): 100ns @ IC = 50mA, VCC = 30V

Package Information

TO-39 Metal Can Package

• Package Type: TO-39 (JEDEC)
• Package Material: Metal can with glass seal
• Lead Material: Copper alloy
• Lead Finish: Solderable plating
• Weight: Approximately 0.6 grams
• Mounting: Through-hole
• Terminal Configuration:
  • Pin 1: Emitter
  • Pin 2: Base
  • Pin 3: Collector (case)

Mechanical Dimensions

• Package Diameter: 8.13mm (0.320 inches)
• Package Height: 6.35mm (0.250 inches)
• Lead Length: 12.7mm (0.500 inches) minimum
• Lead Spacing: 5.08mm (0.200 inches) between pins

Thermal Characteristics

• Thermal Resistance, Junction to Ambient (RθJA): 200°C/W
• Thermal Resistance, Junction to Case (RθJC): 83.3°C/W
• Maximum Junction Temperature (TJmax): 200°C

Reliability Data

• MIL-STD-750 test methods compliant
• ESD Rating: 2kV (Human Body Model)
• Moisture Sensitivity Level (MSL): 1 (Unlimited floor life)
• Flammability Rating: UL 94V-0

Handling and Mounting

When handling and mounting the 2N1613 transistor, observe the following precautions:

• Use proper ESD protection when handling
• Do not exceed maximum ratings during soldering
• Recommended soldering temperature: 260°C maximum for 10 seconds
• When mounting, ensure proper heat sinking if operating near maximum power dissipation
• Avoid mechanical stress on leads during installation

Alternative Parts

For design flexibility, consider these alternative transistors:

• 2N2219: Higher current version
• 2N2222: Plastic package alternative
• 2N1711: Complementary PNP type
• BC337: Modern equivalent

Design Considerations

When designing with the 2N1613, consider the following:

• For amplifier applications, bias the transistor in its linear region
• Use appropriate base resistors to limit base current
• Consider thermal management for high-power applications
• Account for gain variations across temperature and current levels
• For switching applications, ensure fast turn-off with proper base drive